Semiconductor device

ABSTRACT

A semiconductor device includes a semiconductor element, a first lead supporting the semiconductor element, a second lead separated from the first lead, and a connection lead electrically connecting the semiconductor element to the second lead. The connection lead has an end portion soldered to the second lead. This connection-lead end portion has a first surface facing the semiconductor element and a second surface opposite to the first surface. The second lead is formed with a recess that is open toward the semiconductor element. The recess has a side surface facing the second surface of the connection-lead end portion. A solder contact area of the second surface of the connection-lead end portion is larger than a solder contact area of the first surface of the connection-lead end portion.

TECHNICAL FIELD

The present disclosure relates to a semiconductor device.

BACKGROUND

Various configurations have been proposed for producing semiconductordevices. For instance, JP-A-2005-277231 discloses a conventionalsemiconductor device, which includes a semiconductor element, a firstlead, a second lead, a connection lead, and a sealing resin. Thesemiconductor element is mounted on and electrically connected to thefirst lead, while being connected to the second lead via the connectionlead. The connection lead has an end bonded to the second lead bysolder, for example.

The soldering of the connection lead to the second lead may be performedusing a reflow process. In this case, the connection lead may be undulydisplaced relative to the semiconductor element and/or the second leadduring the process, thereby resulting in improper electrical connectionof the connection lead to the semiconductor element and/or the secondlead.

SUMMARY

In the above circumstances, it is an object of the present disclosure toprovide a semiconductor device configured to suppress displacement of aconnection lead.

According to an aspect of the present disclosure, there is provided asemiconductor device including a semiconductor element, a first lead, asecond lead, and a connection lead. The semiconductor element has anelement main surface and an element back surface that face mutuallyopposite sides in a thickness direction, while also having a firstelectrode disposed on the element back surface and a second electrodedisposed on the element main surface. The first lead is joined to thefirst electrode of the semiconductor element, and the second lead thatis electrically connected to the second electrode. The connection leadincludes an element connecting portion joined to the second electrodeand a lead connecting portion joined to the second lead by solder. Thelead connecting portion includes: a lead-connecting-portion firstsurface that faces the semiconductor element in a first directionorthogonal to the thickness direction; a lead-connecting-portion secondsurface that faces opposite to the lead-connecting-portion firstsurface; and a lead-connecting-portion end surface that is connected tothe lead-connecting-portion first surface and thelead-connecting-portion second surface, where thelead-connecting-portion end surface faces the element back surface inthe thickness direction. The second lead includes a connecting portionrecess that includes a first recess side surface facing thelead-connecting-portion second surface and a recess bottom surfacefacing the lead-connecting-portion end surface.

The connecting portion recess is open toward the semiconductor elementin the first direction. An area of a second contact region in which thelead-connecting-portion second surface and solder are in contact witheach other is larger than an area of a first contact region in which thelead-connecting-portion first surface and solder are in contact witheach other.

In a semiconductor device according to the present disclosure, the areaof the second contact region is larger than the area of the firstcontact region. Accordingly, the second surface of the connection leadis drawn toward the first recess side surface of the second lead by thesurface tension of molten solder in the reflow process. As a result, theconnection lead is disposed at a predetermined position relative to thesecond lead, whereby displacement of the connection lead can besuppressed.

Other features and advantages of the present disclosure will be apparentfrom the detailed description given below with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view showing a semiconductor device according to afirst embodiment of the present disclosure.

FIG. 2 is a plan view showing the inside of the semiconductor deviceshown in FIG. 1 in a transparent view.

FIG. 3 is a front view of the semiconductor device shown in FIG. 1 .

FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1 .

FIG. 5 is a back view of the semiconductor device shown in FIG. 1 .

FIG. 6 is a right-side view of the semiconductor device shown in FIG. 1.

FIG. 7 is an enlarged plan view showing a main portion of thesemiconductor device shown in FIG. 1 .

FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 7 .

FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 7 .

FIG. 10 is a plan view showing a manufacturing process of thesemiconductor device shown in FIG. 1 .

FIG. 11 is a plan view showing a manufacturing process of thesemiconductor device shown in FIG. 1 .

FIG. 12 is a plan view showing a manufacturing process of thesemiconductor device shown in FIG. 1 .

FIG. 13 is a plan view showing a manufacturing process of thesemiconductor device shown in FIG. 1 .

FIG. 14 is a plan view showing a manufacturing process of thesemiconductor device shown in FIG. 1 .

FIG. 15 is an enlarged cross-sectional view showing a main portion of asemiconductor device according to a second embodiment of the presentdisclosure.

FIG. 16 is an enlarged plan view showing a main portion of asemiconductor device according to a third embodiment of the presentdisclosure.

FIG. 17 is an enlarged plan view showing a main portion of asemiconductor device according to a fourth embodiment of the presentdisclosure.

FIG. 18 is a plan view showing the inside of a semiconductor deviceaccording to a fifth embodiment of the present disclosure in atransparent view.

FIG. 19 is a plan view showing the inside of a semiconductor deviceaccording to a sixth embodiment of the present disclosure in atransparent view.

FIG. 20 is a plan view showing the inside of a semiconductor deviceaccording to a seventh embodiment of the present disclosure in atransparent view.

EMBODIMENTS

The following describes embodiments of the present disclosure withreference to the accompanying drawings.

A semiconductor device A1 according to a first embodiment of the presentdisclosure will be described based on FIGS. 1 to 9 . The semiconductordevice A1 includes a first lead 1, two second leads 2, a connection lead3, a semiconductor element 6, and a sealing resin 8.

FIG. 1 is a plan view showing the semiconductor device A1. FIG. 2 is aplan view showing the inside of the semiconductor device A1 in atransparent view. In FIG. 2 , the sealing resin 8 is transparent and theexternal shape of the sealing resin 8 is indicated by an imaginary line(line-double-dash line) in order to facilitate understanding. FIG. 3 isa front view showing the semiconductor device A1. FIG. 4 is a bottomview showing the semiconductor device A1. FIG. 5 is a back view showingthe semiconductor device A1. FIG. 6 is a right-side view showing thesemiconductor device A1. FIG. 7 is an enlarged plan view showing a mainportion of the semiconductor device A1. FIG. 8 is a cross-sectional viewtaken along line VIII-VIII in FIG. 7 . FIG. 9 is a cross-sectional viewtaken along line IX-IX in FIG. 7 . In FIGS. 7 to 9 , the sealing resin 8is omitted in order to facilitate understanding.

The semiconductor device A1 shown in these figures is a device that issurface mounted on a circuit board in various apparatuses. Thesemiconductor device A1 has a rectangular shape when viewed in thethickness direction. For the sake of convenience of description, thethickness direction of the semiconductor device A1 will be referred toas the z direction, a direction (left-right direction in FIG. 1 ) thatis orthogonal to the z direction and extends along one side of thesemiconductor device A1 will be referred to as the x direction, and adirection (up-down direction in FIG. 1 ) that is orthogonal to the z andx directions will be referred to as the y direction. The same alsoapplies to the other figures. The z direction corresponds to a“thickness direction” in the present disclosure, and the y directioncorresponds to a “first direction” in the present disclosure. Dimensionsof the semiconductor device A1 are not particularly limited, and thesemiconductor device A1 of the present embodiment has, for example, alength of about 2 to 6 mm in the x direction, a length of about 2 to 6mm in the y direction, and a length of about 0.5 to 1 mm in the zdirection.

The first lead 1 supports the semiconductor element and is electricallyconnected to the semiconductor element 6. The second leads 2 areelectrically connected to the semiconductor element 6. The first lead 1and the second leads 2 are formed by punching or etching a metal plate,for example. The first lead 1 and the second leads 2 are made of metal,which is preferably Cu, Ni, an alloy of Cu or Ni, or a 42 alloy. Thepresent embodiment describes a case in which the first lead 1 and thesecond leads 2 are made of Cu. The thickness of the first lead 1 and thesecond leads 2 is 0.08 to 0.3 mm, for example, and is about 0.25 mm inthe present embodiment.

As shown in FIG. 2 , the first lead 1 is disposed at one end (upper sidein FIG. 2 ) of the semiconductor device A1 in the y direction, andextends over the entire length of the semiconductor device A1 in the xdirection. The two second leads 2 are disposed side by side in the xdirection at the other end (lower side in FIG. 2 ) of the semiconductordevice A1 in the y direction so as to be spaced apart from each otherand spaced apart from the first lead 1.

The first lead 1 includes a mounting portion 11, a first lead terminalportion 12, thin portions 13, and tie bar portions 14.

The mounting portion 11 is located at the center of the first lead 1when viewed in the z direction, and has a substantially rectangularshape when viewed in the z direction. The mounting portion 11 has amounting portion main surface 111 and a mounting portion back surface112. The mounting portion main surface 111 and the mounting portion backsurface 112 face mutually opposite sides in the z direction. Themounting portion main surface 111 faces upward in FIGS. 3, 5, and 6 .The semiconductor element 6 is mounted on the mounting portion mainsurface 111. The mounting portion back surface 112 faces downward inFIGS. 3, 5, and 6 . The mounting portion back surface 112 is exposedfrom the sealing resin 8 and serves as a back surface terminal (see FIG.4 ). Note that the shape of the mounting portion 11 is not limited.

The first lead terminal portion 12 is continuous to the mounting portion11 and has a substantially rectangular shape when viewed in the zdirection. The first lead terminal portion 12 is disposed on one endside (upper side in FIG. 2 ) of the mounting portion 11 in the ydirection. The first lead terminal portion 12 has afirst-lead-terminal-portion main surface 121, afirst-lead-terminal-portion back surface 122, and afirst-lead-terminal-portion end surface 123. Thefirst-lead-terminal-portion main surface 121 and thefirst-lead-terminal-portion back surface 122 face mutually oppositesides in the z direction. The first-lead-terminal-portion main surface121 faces upward in FIGS. 3, 5, and 6 . The first-lead-terminal-portionmain surface 121 and the mounting portion main surface 111 are flushwith each other (see FIG. 2 ). The first-lead-terminal-portion backsurface 122 faces downward in FIGS. 3, 5, and 6 . Thefirst-lead-terminal-portion back surface 122 and the mounting portionback surface 112 are flush with each other (see FIG. 4 ). Thefirst-lead-terminal-portion end surface 123 connects thefirst-lead-terminal-portion main surface 121 and thefirst-lead-terminal-portion back surface 122 to each other, and facesone side (upper side in FIG. 2 ) in the y direction. Thefirst-lead-terminal-portion end surface 123 protrudes from the sealingresin 8. The first-lead-terminal-portion back surface 122 and thefirst-lead-terminal-portion end surface 123 are exposed from the sealingresin 8, are continuous to each other, and serve as a terminal. Notethat the shape of the first lead terminal portion 12 is not limited.

The thin portions 13 are continuous to the mounting portion 11, and arerespectively disposed at opposite ends of the mounting portion 11 in thex direction when viewed in the z direction. The thickness (length in thez direction) of the thin portions 13 is about half the thickness of themounting portion 11. The thin portions 13 are formed throughhalf-etching, for example. The thin portions 13 each have a thin portionmain surface 131 and a thin portion back surface 132. The thin portionmain surface 131 and the thin portion back surface 132 face mutuallyopposite sides in the z direction. The thin portion main surface 131faces upward in FIGS. 3, 5, and 6 . The thin portion main surface 131and the mounting portion main surface 111 are flush with each other.Accordingly, the mounting portion main surface 111, thefirst-lead-terminal-portion main surface 121, and the thin portion mainsurfaces 131 are flush with each other and constitute a single surface(see FIG. 2 ). The thin portion back surfaces 132 face downward in FIGS.3, 5, and 6 . The thin portion back surfaces 132 are not exposed fromthe sealing resin 8, and the thin portions 13 are embedded in thesealing resin 8. Thus, separation of the first lead 1 from the sealingresin 8 is suppressed. Note that a configuration is also possible inwhich the first lead 1 does not include the thin portions 13.

The tie bar portions 14 are continuous to the mounting portion 11, andare respectively disposed at opposite ends of the mounting portion 11 inthe x direction on the other end side (lower side in FIG. 2 ) in the ydirection. Portions of the tie bar portions 14 protrude from the sealingresin 8. The tie bar portions 14 are portions that remain after tie barsthat connect the mounting portion 11 of the first lead 1 to a lead frameare cut. Each tie bar portion 14 has an end surface 143. The end surface143 faces the x direction and is a cut surface that is formed by cuttingthe tie bar.

In the present embodiment, the first lead 1 includes two end surfacerecesses 124 that are recessed from the first-lead-terminal-portion endsurface 123. The end surface recesses 124 are respectively disposedbetween the center of the first-lead-terminal-portion end surface 123and opposite ends thereof in the x direction. The end surface recesses124 span between opposite ends of the first-lead-terminal-portion endsurface 123 in the z direction. The end surface recesses 124 are formedby providing through holes in the lead frame and cutting the lead frameacross the through holes in the manufacturing process, as describedlater.

Each second lead 2 includes a connecting portion 21 and a second leadterminal portion 22.

The connecting portion 21 has a substantially rectangular shape whenviewed in the z direction, and is located on the first lead 1 side ofthe second lead 2. The connecting portion 21 has a connecting portionmain surface 211, a connecting portion back surface 212, and aconnecting portion side surface 213. The connecting portion main surface211 and the connecting portion back surface 212 face mutually oppositesides in the z direction. The connecting portion main surface 211 facesupward in FIGS. 3, 5, and 6 . The connecting portion back surface 212faces downward in FIGS. 3, 5, and 6 . The connecting portion backsurface 212 is exposed from the sealing resin 8 and serves as a backsurface terminal (see FIG. 4 ). The connecting portion side surface 213connects the connecting portion main surface 211 and the connectingportion back surface 212 to each other, and faces the first lead 1 sidein the y direction.

Each connecting portion 21 includes a connecting portion recess 24. Theconnecting portion recess 24 is recessed from the connecting portionmain surface 211 toward the connecting portion back surface 212, and hasa rectangular shape when viewed in the z direction. In the presentembodiment, the connecting portion recess 24 is formed throughhalf-etching. Note that the connecting portion recess 24 may also beformed through pressing. The connecting portion recess 24 is disposed inthe end portion (upper end portion in FIG. 2 ) of the connecting portionmain surface 211 on the first lead 1 side in the y direction and in oneend portion (right end portion in FIG. 2 ) of the connecting portionmain surface 211 in the x direction. The connecting portion recess 24 isopen on the first lead 1 side (upper side in FIG. 2 ) in the y directionand on one side (right side in FIG. 2 ) in the x direction, and has arecess bottom surface 241, a first recess side surface 242, and a secondrecess side surface 243. The recess bottom surface 241 is a rectangularsurface that faces one side (upper side in FIG. 6 ) in the z direction(see FIGS. 7 to 9 ). The first recess side surface 242 is a rectangularsurface that is orthogonal to the recess bottom surface 241 and facesone side (upper side in FIG. 2 ) in the y direction (see FIGS. 7 and 8). The second recess side surface 243 is a rectangular surface that isorthogonal to the recess bottom surface 241 and the first recess sidesurface 242 and faces one side (right side in FIG. 2 ) in the xdirection (see FIGS. 7 and 9 ). A lead connecting portion 32 of theconnection lead 3 is joined to the connecting portion recess 24.

Note that, similarly to the first lead 1, each second lead 2 may beprovided with thin portions that are continuous to the connectingportion 21 and are embedded in the sealing resin 8. Also, the connectingportions 21 are only required to include the connecting portion recess24, and the shape of the connecting portions 21 is not limited.

Each second lead terminal portion 22 is continuous to the connectingportion 21 and has a substantially rectangular shape when viewed in thez direction. The second lead terminal portion 22 is located on the sideopposite to the first lead 1 with respect to the connecting portion 21,and is disposed on the other end side (lower side in FIG. 2 ) in the ydirection. The second lead terminal portion 22 has asecond-lead-terminal-portion main surface 221, and asecond-lead-terminal-portion back surface 222, and asecond-lead-terminal-portion end surface 223. Thesecond-lead-terminal-portion main surface 221 and thesecond-lead-terminal-portion back surface 222 face mutually oppositesides in the z direction. The second-lead-terminal-portion main surface221 faces upward in FIGS. 3, 5, and 6 . The second-lead-terminal-portionmain surface 221 and the connecting portion main surface 211 are flushwith each other (see FIG. 2 ). The second-lead-terminal-portion backsurface 222 faces downward in FIGS. 3, 5, and 6 . Thesecond-lead-terminal-portion back surface 222 and the connecting portionback surface 212 are flush with each other (see FIG. 4 ). Thesecond-lead-terminal-portion end surface 223 connects thesecond-lead-terminal-portion main surface 221 and thesecond-lead-terminal-portion back surface 222 to each other, and facesthe other side (lower side in FIG. 2 ) in the y direction. Thesecond-lead-terminal-portion end surface 223 protrudes from the sealingresin 8. The second-lead-terminal-portion back surface 222 and thesecond-lead-terminal-portion end surface 223 are exposed from thesealing resin 8, are continuous to each other, and serve as a terminal.Note that the shape of the second lead terminal portion 22 is notlimited.

In the present embodiment, each second lead 2 includes two end surfacerecesses 224 that are recessed from the second-lead-terminal-portion endsurface 223. The end surface recesses 224 are respectively disposedbetween the center of the second-lead-terminal-portion end surface 223and opposite ends thereof in the x direction. The end surface recesses224 span between opposite ends of the second-lead-terminal-portion endsurface 223 in the z direction. The end surface recesses 224 are formedby providing through holes in the lead frame and cutting the lead frameacross the through holes in the manufacturing process, as describedlater.

The connection lead 3 is a plate-shaped conductor that electricallyconnects the semiconductor element 6 and the second leads 2 to eachother. The connection lead 3 is formed by punching or etching a metalplate, for example. The connection lead 3 is made of metal, which ispreferably Cu, A1, or an alloy of Cu or A1. The present embodimentdescribes a case in which the connection lead 3 is made of Cu. Thethickness of the connection lead 3 is 0.08 to 0.3 mm, for example, andis about 0.15 mm in the present embodiment.

The connection lead 3 is formed by bending a metal plate, and includesan element connecting portion 31, lead connecting portions 32, a linkageportion 33, and tie bar portions 34.

The element connecting portion 31 is connected to the semiconductorelement 6, is substantially parallel to the x-y plane, and has asubstantially rectangular shape when viewed in the z direction. Theelement connecting portion 31 has an element-connecting-portion firstsurface 311 and an element-connecting-portion second surface 312. Theelement-connecting-portion first surface 311 and theelement-connecting-portion second surface 312 face mutually oppositesides in the z direction. The element-connecting-portion first surface311 faces downward in FIGS. 3, 5, and 6 . The element-connecting-portionfirst surface 311 is joined to the semiconductor element 6 using solder.As shown in FIG. 6 , a plurality of protrusions that extend in the xdirection are provided on the element-connecting-portion first surface311. As a result of solder entering spaces between these protrusions,the element-connecting-portion first surface 311 and the semiconductorelement 6 are firmly joined to each other. Theelement-connecting-portion second surface 312 faces upward in FIGS. 3,5, and 6 .

The lead connecting portions 32 are connected to the second leads 2. Inthe present embodiment, the semiconductor device A1 includes two secondleads 2, and accordingly the connection lead 3 includes two leadconnecting portions 32. Each lead connecting portion 32 is substantiallyparallel to the x-z plane, and has a substantially rectangular shapethat is elongated in the z direction when viewed in the y direction.That is, the thickness Y (length in the y direction) of the leadconnecting portion 32 is smaller than the length Z thereof in the zdirection (see FIG. 8 ). The lead connecting portion 32 is disposedwithin the connecting portion recess 24, and is located approximately atthe center of the connecting portion 21 of the second lead 2 in the xdirection and substantially on the first lead 1 side in the y direction.The lead connecting portion 32 has a lead-connecting-portion firstsurface 321, a lead-connecting-portion second surface 322, alead-connecting-portion first side surface 323, alead-connecting-portion second side surface 324, and alead-connecting-portion end surface 325.

The lead-connecting-portion first surface 321 and thelead-connecting-portion second surface 322 face mutually opposite sidesin the y direction. The lead-connecting-portion first surface 321 facesthe upper side in FIGS. 1 and 2 , and faces the first lead 1 side in they direction. The lead-connecting-portion second surface 322 faces thelower side in FIGS. 1 and 2 , and faces the first recess side surface242 of the second lead 2 (see FIG. 8 ).

The lead-connecting-portion first side surface 323 and thelead-connecting-portion second side surface 324 face mutually oppositesides in the x direction. The lead-connecting-portion first side surface323 faces left in FIGS. 1 and 2 , and faces the second recess sidesurface 243 of the second lead 2 (see FIG. 9 ). Thelead-connecting-portion second side surface 324 faces right in FIGS. 1and 2 . The lead-connecting-portion first side surface 323 and thelead-connecting-portion second side surface 324 are orthogonal to thelead-connecting-portion first surface 321 and thelead-connecting-portion second surface 322.

The lead-connecting-portion end surface 325 faces the other side (lowerside in FIGS. 3, 5, and 6 ) in the z direction, and faces the recessbottom surface 241 of the second lead 2 (see FIGS. 8 and 9 ). Thelead-connecting-portion end surface 325 is orthogonal to thelead-connecting-portion first surface 321, the lead-connecting-portionsecond surface 322, the lead-connecting-portion first side surface 323,and the lead-connecting-portion second side surface 324.

As shown in FIGS. 7 to 9 , the lead connecting portion 32 is disposedwithin the connecting portion recess 24 of the second lead 2, and isjoined thereto using solder 9.

As shown in FIG. 8 , the solder 9 is interposed between thelead-connecting-portion second surface 322 of the lead connectingportion 32 and the first recess side surface 242 of the second lead 2,and a solder fillet 92 is formed spanning from near a boundary betweenthe first recess side surface 242 and the connecting portion mainsurface 211 of the second lead 2 to the lead-connecting-portion secondsurface 322. Also, a solder fillet 91 is formed spanning from near aboundary between the recess bottom surface 241 and the connectingportion side surface 213 of the second lead 2 to thelead-connecting-portion first surface 321. A distance L2 from a leadingend of the solder fillet 92 on the lead-connecting-portion secondsurface 322 to the recess bottom surface 241 is significantly longerthan a distance L1 from a leading end of the solder fillet 91 on thelead-connecting-portion first surface 321 to the recess bottom surface241. Also, the area of a second contact region S2 in which thelead-connecting-portion second surface 322 and the solder 9 are incontact with each other is significantly larger than the area of a firstcontact region S1 in which the lead-connecting-portion first surface 321and the solder 9 are in contact with each other.

Further, as shown in FIG. 8 , a distance W1 between the connectingportion side surface 213 and the lead-connecting-portion first surface321 in the y direction is short, and is at least not longer than adistance W2 between the first recess side surface 242 and thelead-connecting-portion second surface 322. In the present embodiment,the distance W2 is about 0.1 mm. It is preferable that the distance W2is not larger than the thickness Y of the lead connecting portion 32(i.e., the distance between the lead-connecting-portion first surface321 and the lead-connecting-portion second surface 322) and is at least⅓Y.

As shown in FIG. 9 , the solder 9 is interposed between thelead-connecting-portion first side surface 323 of the lead connectingportion 32 and the second recess side surface 243 of the second lead 2,and a solder fillet 93 is formed spanning from near a boundary betweenthe second recess side surface 243 and the connecting portion mainsurface 211 of the second lead 2 to the lead-connecting-portion firstside surface 323. Also, a solder fillet 94 is formed spanning from therecess bottom surface 241 of the second lead 2 to thelead-connecting-portion second side surface 324. A distance L3 from aleading end of the solder fillet 93 on the lead-connecting-portion firstside surface 323 to the recess bottom surface 241 is significantlylonger than a distance L4 from a leading end of the solder fillet 94 onthe lead-connecting-portion second side surface 324 to the recess bottomsurface 241. Also, the area of a third contact region S3 in which thelead-connecting-portion first side surface 323 and the solder 9 are incontact with each other is significantly larger than the area of afourth contact region S4 in which the lead-connecting-portion secondside surface 324 and the solder 9 are in contact with each other.

The linkage portion 33 links the element connecting portion 31 and thetwo lead connecting portions 32 to each other. One end of the linkageportion 33 in the y direction is continuous to the element connectingportion 31, and the other end of the linkage portion 33 in the ydirection is divided into two portions that are respectively continuousto the lead connecting portions 32 (see FIG. 2 ). The linkage portion 33has a linkage portion first surface 331 and a linkage portion secondsurface 332. The linkage portion first surface 331 and the linkageportion second surface 332 face mutually opposite sides in the zdirection. The linkage portion first surface 331 faces downward in FIGS.3, 5, and 6 . The linkage portion first surface 331 is continuous to theelement-connecting-portion first surface 311 and thelead-connecting-portion first surfaces 321. The linkage portion secondsurface 332 faces upward in FIGS. 3, 5, and 6 . The linkage portionsecond surface 332 is continuous to the element-connecting-portionsecond surface 312 and the lead-connecting-portion second surfaces 322.

The tie bar portions 34 are continuous to the linkage portion 33, andare respectively disposed at opposite ends of the linkage portion 33 inthe x direction. The tie bar portions 34 are portions that remain aftertie bars that connect the connection lead 3 to a lead frame are cut.Each tie bar portion 34 has an end surface that is a cut surface formedby cutting the tie bar.

The semiconductor element 6 exhibits electrical functions of thesemiconductor device A1. The type of the semiconductor element 6 is notparticularly limited. In the present embodiment, the semiconductorelement 6 is a diode. The semiconductor element 6 includes an elementmain body 60, an element main surface 61, an element back surface 62, afirst electrode 63, and a second electrode 64.

As shown in FIG. 6 , the element main surface 61 and the element backsurface 62 face mutually opposite sides in the z direction. The elementmain surface 61 faces upward in FIGS. 3, 5, and 6 . The element backsurface 62 faces downward in FIGS. 3, 5, and 6 . The first electrode 63is disposed on the element back surface 62. The second electrode 64 isdisposed on the element main surface 61. In the present embodiment, thefirst electrode 63 is a cathode electrode, and the second electrode 64is an anode electrode.

As shown in FIG. 2 , the semiconductor element 6 is mounted at thecenter of the mounting portion main surface 111 in the x and ydirections. As shown in FIG. 6 , the semiconductor element 6 is mountedon the mounting portion main surface 111 via solder (not shown) with theelement back surface 62 facing the mounting portion main surface 111.Thus, the first electrode 63 of the semiconductor element 6 is joined tothe mounting portion main surface 111 using solder, and is electricallyconnected to the first lead 1. Further, as shown in FIG. 6 , theelement-connecting-portion first surface 311 of the connection lead 3and the element main surface 61 of the semiconductor element 6 arejoined to each other via solder (not shown). Thus, the second electrode64 of the semiconductor element 6 is joined to the connection lead 3using solder, and is electrically connected to the second leads 2 viathe connection lead 3. The first lead terminal portion 12 that iselectrically connected to the first electrode 63 functions as a cathodeterminal of the semiconductor device A1, and the second lead terminalportions 22 that are electrically connected to the second electrode 64function as anode terminals of the semiconductor device A1.

The sealing resin 8 covers respective portions of the first lead 1 andthe second leads 2, the connection lead 3, and the semiconductor element6. The sealing resin 8 is made of a black epoxy resin, for example.

The sealing resin 8 has a resin main surface 81, a resin back surface82, and resin side surfaces 83. The resin main surface 81 and the resinback surface 82 face mutually opposite sides in the z direction. Theresin main surface 81 faces upward in FIGS. 3, 5, and 6 , and the resinback surface 82 faces downward in FIGS. 3, 5, and 6 . The resin sidesurfaces 83 connect the resin main surface 81 and the resin back surface82 to each other, and face the x direction or the y direction. The resinside surfaces 83 include first side surfaces 831 and second sidesurfaces 832. The second side surfaces 832 are continuous to the resinback surface 82 and are parallel to the x-z plane or the y-z plane. Thefirst side surfaces 831 are continuous to the resin main surface 81 andare inclined relative to the x-z plane or the y-z plane.

In the present embodiment, the first lead terminal portion 12, the tiebar portions 14, and the second lead terminal portions 22 protrude fromthe second side surfaces 832 of the resin side surfaces 83, and thefirst-lead-terminal-portion end surface 123, the end surface recesses124, the second-lead-terminal-portion end surfaces 223, and the endsurface recesses 224 are exposed from the second side surfaces 832 ofthe resin side surfaces 83. The mounting portion back surface 112 andthe first-lead-terminal-portion back surface 122 of the first lead 1 andthe connecting portion back surfaces 212 and thesecond-lead-terminal-portion back surfaces 222 of the second leads 2 areflush with the resin back surface 82 of the sealing resin 8. The twosecond leads 2 are disposed along a surface that faces the other side(lower side in FIG. 2 ) in the y direction, out of the resin sidesurfaces 83.

Next, one example of the manufacturing method of the semiconductordevice A1 will be described with reference to FIGS. 10 to 14 . Note thatthese figures are plan views, and the x direction, the y direction, andthe z direction in these figures are the same as those in FIG. 2 .

First, a lead frame 10 is prepared as shown in FIG. 10 . The lead frame10 is a plate-shaped material that constitutes the first lead 1 and thesecond leads 2. Note that FIG. 10 only shows regions that constitute onefirst lead 1 and two second leads 2 (the same also applies to FIGS. 13and 14 ). The lead frame 10 is formed by etching a metal plate. Notethat the lead frame 10 may also be formed by punching a metal plate.

The lead frame 10 has a main surface 1010 that constitutes the mountingportion main surface 111, the first-lead-terminal-portion main surface121, the thin portion main surfaces 131, the connecting portion mainsurfaces 211, and the second-lead-terminal-portion main surfaces 221.Relatively coarsely hatched regions in the drawing have a largethickness (length in the z direction), and include regions thatconstitute the mounting portion 11, the first lead terminal portion 12,the connecting portions 21, and the second lead terminal portions 22.Relatively densely hatched regions in the drawing have a small thickness(length in the z direction), and are regions 1020 that constitute thethin portions 13. These regions 1020 are formed through half-etching inwhich only a back surface that faces the side opposite to the mainsurface 1010 is etched. Dotted regions 1030 in the drawing have a smallthickness (length in the z direction), and constitute the connectingportion recesses 24. These regions 1030 are formed through half-etchingin which only the main surface 1010 is etched. Note that the regions1020 and 1030 may also be formed through pressing.

Through holes 1040 for forming the end surface recesses 124 and 224 areformed in regions that constitute the first lead terminal portion 12 andthe second lead terminal portions 22. In the present embodiment, thebase material of the lead frame 10 is made of Cu.

Further, separately from the lead frame 10, a lead frame 20 is preparedas shown in FIG. 11 . In FIG. 11 , the lead frame 20 is hatched. Thelead frame 20 is a plate-shaped material that constitutes the connectionlead 3. Note that FIG. 11 only shows a region that constitutes oneconnection lead 3 (the same also applies to FIG. 12 ). The lead frame 20is formed by etching a metal plate. Note that the lead frame 20 may alsobe formed by punching a metal plate. In the present embodiment, the basematerial of the lead frame 20 is made of Cu. Then, the lead frame 20 isbent to form the element connecting portion 31, the lead connectingportions 32, and the linkage portion 33 as shown in FIG. 12 . Then, thelead frame 20 is cut along a cutting line 1050 (indicated by aline-double-dash line in FIG. 12 ) to obtain the connection lead 3. As aresult of tie bars 1060 being cut along the cutting line 1050, the tiebar portions 34 having end surfaces, which are cut surfaces, are formed.

Then, solder paste is applied to the center of a region of the mainsurface 1010 of the lead frame 10 that constitutes the mounting portionmain surface 111 of the first lead 1, and the semiconductor element 6 isbonded to the region. Then, as shown in FIG. 13 , solder paste 900 isapplied to the second electrode 64 on the element main surface 61 of thesemiconductor device 6. The solder paste 900 is also applied to theinside of the connecting portion recesses 24 (regions 1030) of thesecond leads 2. At this time, the solder paste 900 is applied close tothe second recess side surfaces 243.

Then, as shown in FIG. 14 , the connection lead 3 is bonded to thesecond electrode 64 of the semiconductor element 6 and the connectingportion recesses 24. The element connecting portion 31 of the connectionlead 3 is bonded to the second electrode 64 of the semiconductor element6, and the lead connecting portions 32 of the connection lead 3 arebonded to the connecting portion recesses 24. Then, a reflow process isperformed. The solder paste 900 melts in the reflow process, and themolten solder joins the element connecting portion 31 and the secondelectrode 64 to each other and joins the lead connecting portions 32 andthe connecting portion recesses to each other. At this time, the leadconnecting portions 32 are drawn toward the first recess side surfaces242 and the second recess side surfaces 243 by the surface tension ofthe molten solder. Thus, the connection lead 3 is positioned.

Then, the sealing resin 8 (indicated by a line-dash line in FIG. 14 )that covers the semiconductor element 6, the connection lead 3, andportions of the lead frame 10 is formed by curing a resin material.Then, the lead frame 10 is cut along a cutting line 1070 (indicated by aline-double-dash line in FIG. 14 ). At this time, as a result of thelead frame 10 being cut along the cutting line 1070 that crosses thethrough holes 1040, the first-lead-terminal-portion end surface 123 andthe second-lead-terminal-portion end surfaces 223, which are cutsurfaces, and the end surface recesses 124 and 224, which formed innerwalls of the through holes 1040, are formed. Also, as a result of tiebars 1080 being cut along the cutting line 1070, the tie bar portions 14having the end surfaces 143, which are cut surfaces, are formed.

Through the above process, the above-described semiconductor device A1is obtained.

Next, functions and effects of the semiconductor device A1 will bedescribed.

According to the present embodiment, the lead connecting portions 32 ofthe connection lead 3 are joined to the connecting portions 21 withinthe connecting portion recesses 24 of the second leads 2. In the reflowprocess, each lead connecting portion 32 is drawn toward the firstrecess side surface 242 by the surface tension of molten solderinterposed between the lead-connecting-portion second surface 322 andthe first recess side surface 242. At this time, thelead-connecting-portion second surface 322 becomes substantiallyparallel to the first recess side surface 242. Therefore, theorientation of the connection lead 3 when viewed in the z direction canbe kept from deviating from a predetermined orientation. Furthermore,the distance between the lead-connecting-portion second surface 322 andthe first recess side surface 242 can be made constant by adjusting theamount of the solder paste 900 applied to the connecting portion recess24. Therefore, the position of the connection lead 3 in the y directioncan be kept from being displaced from a predetermined position.

Also, in the reflow process, each lead connecting portion 32 is drawntoward the second recess side surface 243 by the surface tension ofmolten solder interposed between the lead-connecting-portion first sidesurface 323 and the second recess side surface 243. At this time, thelead-connecting-portion first side surface 323 becomes substantiallyparallel to the second recess side surface 243. Therefore, theorientation of the connection lead 3 when viewed in the z direction canbe kept from deviating from a predetermined orientation. Furthermore,the distance between the lead-connecting-portion first side surface 323and the second recess side surface 243 can be made constant by adjustingthe amount of the solder paste 900 applied to the connecting portionrecess 24. Therefore, the position of the connection lead 3 in the xdirection can be kept from being displaced from a predeterminedposition.

Furthermore, according to the present embodiment, the distance W1between the connecting portion side surface 213 and thelead-connecting-portion first surface 321 in the y direction is short,when compared to the distance W2 between the first recess side surface242 and the lead-connecting-portion second surface 322. Accordingly, thesolder fillet 91 formed on the lead-connecting-portion first surface 321is small, when compared to the solder fillet 92 formed on thelead-connecting-portion second surface 322. Also, the area of the secondcontact region S2 in which the lead-connecting-portion second surface322 and the solder 9 are in contact with each other is significantlylarge, when compared to the area of the first contact region S1 in whichthe lead-connecting-portion first surface 321 and the solder 9 are incontact with each other. These facts mean that, in the reflow process,the amount of molten solder located on the lead-connecting-portionsecond surface 322 side is significantly larger than the amount ofmolten solder located on the lead-connecting-portion first surface 321side. Therefore, the surface tension of the solder located on thelead-connecting-portion first surface 321 side is significantly small,when compared to the surface tension of the solder located on thelead-connecting-portion second surface 322 side, and is unlikely toaffect the position of the lead connecting portion 32 in the ydirection.

Furthermore, according to the present embodiment, the solder paste 900is applied close to the second recess side surface 243 in the process ofapplying the solder paste in the manufacturing process. Accordingly, thearea of the third contact region S3 in which the lead-connecting-portionfirst side surface 323 and the solder 9 are in contact with each otheris significantly large, when compared to the area of the fourth contactregion S4 in which the lead-connecting-portion second side surface 324and the solder 9 are in contact with each other. Also, the solder fillet94 formed on the lead-connecting-portion second side surface 324 issmall, when compared to the solder fillet 93 formed on thelead-connecting-portion first side surface 323. In the reflow process,the amount of molten solder located on the lead-connecting-portion firstside surface 323 side is significantly larger than the amount of moltensolder located on the lead-connecting-portion second side surface 324side, and therefore the surface tension of the solder located on thelead-connecting-portion second side surface 324 side is significantlysmall, when compared to the surface tension of the solder located on thelead-connecting-portion first side surface 323 side, and is unlikely toaffect the position of the lead connecting portion 32 in the xdirection.

Furthermore, according to the present embodiment, the semiconductordevice A1 includes two second leads 2. The connection lead 3 includestwo lead connecting portions 32 continuous to the linkage portion 33.The lead connecting portions 32 are respectively joined to the secondleads 2. Therefore, displacement of the connection lead 3 can be furthersuppressed, when compared to a case in which only one second lead 2 andonly one lead connecting portion 32 are provided.

A semiconductor device A2 according to a second embodiment of thepresent disclosure will be described based on FIG. 15 . In FIG. 15 ,elements that are the same as or are similar to those in theabove-described semiconductor device A1 are denoted with the samereference numerals as those used for corresponding elements in thesemiconductor device A1, and a redundant description thereof is omitted.FIG. 15 is an enlarged cross-sectional view showing a main portion ofthe semiconductor device A2, and corresponds to FIG. 8 showing thesemiconductor device A1 according to the first embodiment.

The semiconductor device A2 according to the present embodiment differsfrom the semiconductor device A1 in the method for forming theconnecting portion recesses 24 of the second leads 2. The connectingportion recesses 24 according to the present embodiment are formedthrough pressing, rather than half-etching. The connecting portion sidesurface 213 includes a protruding portion 213 a. The protruding portion213 a bulges and protrudes toward one side (right side in FIG. 15 ) inthe y direction due to plastic deformation that occurs in the pressing,is formed at an end portion of the connecting portion side surface 213on the connecting portion recess 24 side, and extends in the xdirection.

In the present embodiment, the configurations of the second leads 2 andthe connection lead 3 are similar to those in the first embodiment, andtherefore effects similar to those achieved in the first embodiment canbe achieved.

A semiconductor device A3 according to a third embodiment of the presentdisclosure will be described based on FIG. 16 . In FIG. 16 , elementsthat are the same as or are similar to those in the above-describedsemiconductor device A1 are denoted with the same reference numerals asthose used for corresponding elements in the semiconductor device A1,and a redundant description thereof is omitted. FIG. 16 is an enlargedplan view showing a main portion of the semiconductor device A3, andcorresponds to FIG. 7 showing the semiconductor device A1 according tothe first embodiment.

The semiconductor device A3 according to the present embodiment differsfrom the semiconductor device A1 in the arrangement positions and theshape of the connecting portion recesses 24. Each connecting portionrecess 24 according to the present embodiment is disposed in the endportion (upper end portion in FIG. 16 ) of the connecting portion mainsurface 211 on the first lead 1 side in the y direction and in the otherend portion (left end portion in FIG. 16 ) of the connecting portionmain surface 211 in the x direction. Each connecting portion recess 24is open on the first lead 1 side (upper side in FIG. 16 ) in the ydirection and on the other side (left side in FIG. 16 ) in the xdirection. The second recess side surface 243 faces the other side (leftside in FIG. 16 ) in the x direction, and faces thelead-connecting-portion second side surface 324 of the connection lead3.

In the present embodiment as well, in the reflow process, the surfacetension of molten solder interposed between the lead-connecting-portionsecond surface 322 and the first recess side surface 242 acts, and thesurface tension of molten solder located on the lead-connecting-portionfirst surface 321 side does not act much, as is the case with the firstembodiment. Also, in the reflow process, the surface tension of moltensolder interposed between the lead-connecting-portion second sidesurface 324 and the second recess side surface 243 acts, and the surfacetension of molten solder located on the lead-connecting-portion firstside surface 323 side does not act much. Therefore, effects similar tothose achieved in the first embodiment can be achieved.

A semiconductor device A4 according to a fourth embodiment of thepresent disclosure will be described based on FIG. 17 . In FIG. 17 ,elements that are the same as or are similar to those in theabove-described semiconductor device A1 are denoted with the samereference numerals as those used for corresponding elements in thesemiconductor device A1, and a redundant description thereof is omitted.FIG. 17 is an enlarged plan view showing a main portion of thesemiconductor device A4, and corresponds to FIG. 7 showing thesemiconductor device A1 according to the first embodiment.

The semiconductor device A4 according to the present embodiment differsfrom the semiconductor device A1 in the arrangement positions and theshape of the connecting portion recesses 24. Each connecting portionrecess 24 according to the present embodiment is disposed in the endportion (upper end portion in FIG. 17 ) of the connecting portion mainsurface 211 on the first lead 1 side in the y direction, and spansbetween opposite ends of the connecting portion main surface 211 in thex direction. Each connecting portion recess 24 is open on the first lead1 side (upper side in FIG. 17 ) in the y direction and on both sides inthe x direction. Each connecting portion recess 24 does not have asurface that corresponds to the second recess side surface 243 in thefirst embodiment.

In the present embodiment as well, in the reflow process, the surfacetension of molten solder interposed between the lead-connecting-portionsecond surface 322 and the first recess side surface 242 acts, and thesurface tension of molten solder located on the lead-connecting-portionfirst surface 321 side does not act much, as is the case with the firstembodiment. Therefore, the orientation of the connection lead 3 whenviewed in the z direction can be kept from deviating from apredetermined orientation. Also, the position of the connection lead 3in the y direction can be kept from being displaced from a predeterminedposition. Note that the position of the connection lead 3 in the xdirection can be adjusted to some extent so as to match a predeterminedposition by adjusting the position in the connecting portion recess 24to which the solder paste 900 is applied. However, in order to furthersuppress displacement of the connection lead 3 in the x direction, it isdesirable that the connecting portion recess 24 has the second recessside surface 243 as is the case with the first to third embodiments.

A semiconductor device A5 according to a fifth embodiment of the presentdisclosure will be described based on FIG. 18 . In FIG. 18 , elementsthat are the same as or are similar to those in the above-describedsemiconductor device A1 are denoted with the same reference numerals asthose used for corresponding elements in the semiconductor device A1,and a redundant description thereof is omitted. FIG. 18 is a plan viewshowing the inside of the semiconductor device A5 in a transparent view,and corresponds to FIG. 2 showing the semiconductor device A1 accordingto the first embodiment.

The semiconductor device A5 according to the present embodiment differsfrom the semiconductor device A1 in the number of second leads 2included in the semiconductor device. The semiconductor device A5includes only one second lead 2. The connection lead 3 includes only onelead connecting portion 32 in correspondence with the number of secondleads 2.

In the present embodiment, the configurations of the connecting portionrecess 24 of the second lead 2 and the lead connecting portion 32 of theconnection lead 3 are similar to those in the first embodiment, andtherefore effects similar to those achieved in the first embodiment canbe achieved. Note that the number of second leads 2 is not limited, andmay be three or more.

A semiconductor device A6 according to a sixth embodiment of the presentdisclosure will be described based on FIG. 19 . In FIG. 19 , elementsthat are the same as or are similar to those in the above-describedsemiconductor device A1 are denoted with the same reference numerals asthose used for corresponding elements in the semiconductor device A1,and a redundant description thereof is omitted. FIG. 19 is a plan viewshowing the inside of the semiconductor device A6 in a transparent view,and corresponds to FIG. 2 showing the semiconductor device A1 accordingto the first embodiment.

The semiconductor device A6 according to the present embodiment differsfrom the semiconductor device A1 in the configuration of thesemiconductor element 6. In the present embodiment, the semiconductorelement 6 is a transistor, such as a MOSFET (Metal-Oxide-SemiconductorField-Effect Transistor), and further includes a third electrode 65 thatis disposed on the element main surface 61. The semiconductor device A6includes only one second lead 2, and further includes a third lead 4.The connection lead 3 includes only one lead connecting portion 32 incorrespondence with the number of second leads 2, and the leadconnecting portion 32 is joined to the second lead 2. The third lead 4includes a connecting portion 41 and a third lead terminal portion 42.The connecting portion 41 is similar to the connecting portion 21, butdoes not include the connecting portion recess 24. The third leadterminal portion 42 is similar to the second lead terminal portion 22.One end of a bonding wire 7 is joined to the third electrode 65, and theother end of the bonding wire 7 is joined to the connecting portion 41of the third lead 4. Thus, the third electrode 65 and the third lead 4are electrically connected to each other. In order to facilitate joiningof the bonding wire 7, a plating layer made of Ag or the like may alsobe formed on the surface of the third lead 4.

In the present embodiment, the configurations of the connecting portionrecess 24 of the second lead 2 and the lead connecting portion 32 of theconnection lead 3 are similar to those in the first embodiment, andtherefore effects similar to those achieved in the first embodiment canbe achieved. Furthermore, the semiconductor device A6 according to thepresent embodiment is applicable to a case in which two types ofelectrode are disposed on the element main surface 61 of thesemiconductor element 6.

A semiconductor device A7 according to a seventh embodiment of thepresent disclosure will be described based on FIG. 20 . In FIG. 20 ,elements that are the same as or are similar to those in theabove-described semiconductor device A6 are denoted with the samereference numerals as those used for corresponding elements in thesemiconductor device A6, and a redundant description thereof is omitted.FIG. 20 is a plan view showing the inside of the semiconductor device A7in a transparent view, and corresponds to FIG. 19 showing thesemiconductor device A6 according to the sixth embodiment.

The semiconductor device A7 according to the present embodiment differsfrom the semiconductor device A6 in the method for connecting the thirdelectrode 65 to the third lead 4. In the present embodiment, the thirdelectrode 65 and the third lead 4 are connected to each other via aconnection lead 5, rather than the bonding wire 7. The connectingportion 41 of the third lead 4 according to the present embodimentincludes a connecting portion recess 44 that is similar to theconnecting portion recess 24 of the second lead 2. The semiconductordevice A7 further includes the connection lead 5. The connection lead 5is similar to the connection lead 3, and includes an element connectingportion 51, a lead connecting portion 52, and a linkage portion 53. Theelement connecting portion 51 is similar to the element connectingportion 31, and is connected to the third electrode 65 of thesemiconductor element 6. The lead connecting portion 52 is similar tothe lead connecting portion 32, and is connected to the third lead 4.The linkage portion 53 is similar to the linkage portion 33, and linksthe element connecting portion 51 and the lead connecting portion 52 toeach other. The connection lead 5 corresponds to a “second connectionlead” in the present disclosure.

In the present embodiment, the configurations of the second lead 2 andthe connection lead 3 are similar to those in the sixth embodiment, andthe third electrode 65 is connected to the third lead 4, and thereforeeffects similar to those achieved in the sixth embodiment can beachieved. Furthermore, according to the present embodiment, the thirdelectrode 65 and the third lead 4 are connected to each other via theconnection lead 5. The configuration of the connecting portion recess 44of the third lead 4 is similar to the configuration of the connectingportion recess 24 of the second lead 2, and the configuration of thelead connecting portion 52 of the connection lead 5 is similar to theconfiguration of the lead connecting portion 32 of the connection lead3. Therefore, displacement of the connection lead 5 can be suppressed inthe present embodiment. Furthermore, unlike the sixth embodiment, aprocess for connecting the second electrode 64 to the second lead 2 anda process for connecting the third electrode 65 to the third lead 4 canbe performed using the same process.

A semiconductor device according to the present disclosure is notlimited to the above-described embodiments. Various design changes canbe made on specific configurations of the portions of the semiconductordevice according to the present disclosure.

The invention claimed is:
 1. A semiconductor device comprising: asemiconductor element that includes: an element main surface and anelement back surface that face mutually opposite sides in a thicknessdirection; a first electrode that is disposed on the element backsurface; and a second electrode that is disposed on the element mainsurface; a first lead to which the first electrode of the semiconductorelement is joined; at least two second leads, including a first secondlead and a second second lead that are electrically connected to thesecond electrode; and a connection lead including an element connectingportion joined to the second electrode and a lead connecting portionjoined to the first second lead and the second second lead by solder,wherein the lead connecting portion includes: a lead-connecting-portionfirst surface that faces the semiconductor element in a first directionorthogonal to the thickness direction; a lead-connecting-portion secondsurface that faces opposite to the lead-connecting-portion firstsurface; and a lead-connecting-portion end surface that is connected tothe lead-connecting-portion first surface and thelead-connecting-portion second surface and faces in the thicknessdirection, the first second lead and the second second lead include afirst connecting portion recess and a second connecting portion recess,respectively, each of which includes a first recess side surface facingthe lead-connecting-portion second surface and a recess bottom surfacefacing the lead-connecting-portion end surface, the first connectingportion recess and the second connecting portion recess being open in asame direction orthogonal to the thickness direction, and an area of asecond contact region in which the lead-connecting-portion secondsurface and solder are in contact with each other is larger than an areaof a first contact region in which the lead-connecting-portion firstsurface and solder are in contact with each other.
 2. The semiconductordevice according to claim 1, wherein the first connecting portion recessincludes a second recess side surface that intersects the first recessside surface and the recess bottom surface of the first connectingportion recess.
 3. The semiconductor device according to claim 2,wherein the lead connecting portion includes: a lead-connecting-portionfirst side surface that intersects the lead-connecting-portion firstsurface and the lead-connecting-portion end surface and faces the secondrecess side surface; and a lead-connecting-portion second side surfacethat faces opposite to the lead-connecting-portion first side surface,and an area of a third contact region in which thelead-connecting-portion first side surface and solder are in contactwith each other is larger than an area of a fourth contact region inwhich the lead-connecting-portion second side surface and solder are incontact with each other.
 4. The semiconductor device according to claim3, wherein the first connecting portion recess is open on a side facingthe lead-connecting-portion second side surface.
 5. The semiconductordevice according to claim 1, wherein a distance between thelead-connecting-portion first surface and the lead-connecting-portionsecond surface is smaller than a length of the lead-connecting-portionfirst surface in the thickness direction.
 6. The semiconductor deviceaccording to claim 1, wherein the one second lead includes a connectingportion side surface that faces the semiconductor element in the firstdirection and is offset toward the semiconductor element with respect tothe first recess side surface of the first connecting portion recess. 7.The semiconductor device according to claim 6, wherein, in the firstdirection, a distance between the connecting portion side surface of thefirst second lead and the lead-connecting-portion first surface is notlonger than a distance between the lead-connecting-portion secondsurface and the first recess side surface of the first connectingportion recess.
 8. The semiconductor device according to claim 6,wherein the connecting portion side surface of the first second leadincludes an end portion on a side of the first connecting portionrecess, and the end portion is formed with a protruding portion thatprotrudes toward the semiconductor element.
 9. The semiconductor deviceaccording to claim 1, wherein a distance between thelead-connecting-portion second surface and the first recess side surfaceof the first connecting portion recess is not longer than a distancebetween the lead-connecting-portion first surface and thelead-connecting-portion second surface and is at least ⅓ of the distancebetween the lead-connecting-portion first surface and thelead-connecting-portion second surface.
 10. The semiconductor deviceaccording to claim 1, further comprising a sealing resin that covers thesemiconductor element, wherein the sealing resin includes: a resin mainsurface and a resin back surface that face mutually opposite sides inthe thickness direction; and a resin side surface that connects theresin main surface and the resin back surface to each other, wherein thefirst lead, the first second lead and the second second lead are exposedfrom the resin back surface.
 11. The semiconductor device according toclaim 10, wherein the first second lead and the second second lead aredisposed along the resin side surface.
 12. The semiconductor deviceaccording to claim 10, wherein the connection lead includes two leadconnecting portions and a linkage portion that connects the two leadconnecting portions to the element connecting portion.
 13. Thesemiconductor device according to claim 1, wherein the semiconductorelement is a diode.
 14. The semiconductor device according to claim 1,further comprising a third lead, wherein the semiconductor elementincludes a third electrode that is disposed on the element main surfaceand electrically connected to the third lead.
 15. The semiconductordevice according to claim 14, further comprising an additionalconnection lead joined to the third electrode and the third lead. 16.The semiconductor device according to claim 14, further comprising abonding wire joined to the third electrode and the third lead.
 17. Thesemiconductor device according to claim 14, wherein the semiconductorelement is a transistor.